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| BYP 103 FRED Diode * Fast recovery epitaxial diode * Soft recovery characteristics Type BYP 103 VRRM 1000V IFRMS 75A trr 140ns Package TO-218 AD Ordering Code C67047-A2066-A2 Maximum Ratings Parameter Mean forward current Symbol Values 45 Unit A 75 180 IFAV IFRMS IFSM IFRM 400 i2dt 162 TC = 90 C, D = 0.5 RMS forward current Surge forward current, sine halfwave, aperiodic Tj = 100 C, f = 50 Hz Repetitive peak forward current Tj = 100 C, tp 10 s i 2t value Tj = 100 C, tp = 10 ms Repetitive peak reverse voltage Surge peak reverse voltage Power dissipation A2s 1000 1000 W 115 -40 ... + 150 -40 ... + 150 0.5 46 E 40 / 150 / 56 K/W C V VRRM VRSM Ptot Tj Tstg RthJC RthJA - TC = 90 C Chip or operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip-ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Semiconductor Group 1 12.96 BYP 103 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol min. Static Characteristics Forward voltage drop Values typ. max. Unit VF 1.7 1.9 1.3 1.5 0.01 0.05 0.15 2.35 - V IF = 30 A, Tj = 25 C IF = 45 A, Tj = 25 C IF = 30 A, Tj = 100 C IF = 45 A, Tj = 100 C Reverse current IR 0.25 - mA VR = 1000 V, Tj = 25 C VR = 1000 V, Tj = 100 C VR = 1000 V, Tj = 150 C AC Characteristics Reverse recovery charge Qrr 6 - C IF = 45 A, VCC = 300 V, diF/dt = -1000 A/s Tj = 100 C Peak reverse recovery current IRRM 60 - A IF = 45 A, VCC = 300 V, diF/dt = -1000 A/s Tj = 100 C Reverse recovery time trr 140 - ns IF = 45 A, VCC = 300 V, diF/dt = -1000 A/s Tj = 100 C Storage time tS 70 1 - IF = 45 A, VCC = 300 V, diF/dt = -1000 A/s Tj = 100 C Softfaktor S IF = 45 A, VCC = 300 V, diF/dt = -1000 A/s Tj = 100 C Semiconductor Group 2 12.96 BYP 103 Typ. forward characteristics Typ. reverse current IF = f (VF) parameter: Tj 10 3 IRRM = f (diF / dt) parameter: VCC = 300 V,IF = 45 A, Tj = 100 C 80 A A IF 10 2 IRRM 60 Tj=100C 25C 50 10 1 40 30 10 0 20 10 10 -1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V VF 3.0 0 1 10 10 2 10 3 A/us diF/dt Typ. reverse recovery charge Qrr = f (diF / dt) parameter: VCC = 300 V,IF = 45 A, Tj = 100 C 7.0 uC 6.0 Qrr 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 1 10 10 2 10 3 A/us diF/dt Semiconductor Group 3 12.96 |
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